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SIHB125N60EFGE3 Результаты поискаC
Премиум C
| Номер части | MFG | Техническая спецификация | Описание | Q'ty | Датакод | Расположение | Рег Дата | Поставщик | RFQ |
SIHB120N60E
|
VISHAY |
|
384942 | 2022+ | INSTOCK | 24-08-15 | Nego IC Co. |
Цитата
|
|
|
SIHB120N60E-GE3
|
VISHAY |
|
TO-263-3 | 10000 | 2022+ | 24-08-15 | Nego IC Co. |
Цитата
|
|
|
SIHB120N60EXX
|
VISHAY |
|
TO-263 | 384706 | 2022+ | INSTOCK | 24-08-15 | Nego IC Co. |
Цитата
|
|
SIHB12N50C
|
VISHAY |
|
10000 | 2022+ | 24-08-15 | Nego IC Co. |
Цитата
|
||
| SIHB12N50C-E3 | VISHAY |
|
D2PAKTO-263 | 357 | 20+PB | Pb-Free | 24-08-15 | IC Agent Electronics Ins |
Цитата
|
| SIHB12N50C-E3 | VishaySili |
|
MOSFETN-CH500V12AD2PAK | 59850 | 2020 | 24-08-15 | Hong Da Electronics Co.LTD |
Цитата
|
|
|
SIHB12N50C-E3
|
VISHAY |
|
TO-263 | 10000 | 2022+ | 24-08-15 | Nego IC Co. |
Цитата
|
|
|
SIHB12N50CXX
|
VISHAY |
|
TO-263 | 384699 | 2022+ | INSTOCK | 24-08-15 | Nego IC Co. |
Цитата
|
|
SIHB12N50E
|
VISHAY |
|
D2PAK(TO-263) | 384698 | 2022+ | INSTOCK | 24-08-15 | Nego IC Co. |
Цитата
|
| SIHB12N50E-GE3 | VISHAY |
|
D2PAKTO-263 | 357 | 20+PB | Pb-Free | 24-08-15 | IC Agent Electronics Ins |
Цитата
|
| SIHB12N50E-GE3 | VishaySili |
|
MOSFETN-CH500V10.5ATO-263 | 59850 | 2020 | 24-08-15 | Hong Da Electronics Co.LTD |
Цитата
|
|
|
SIHB12N50E-GE3
|
- |
|
NA | 10000 | 2022+ | 24-08-15 | Nego IC Co. |
Цитата
|
|
|
SIHB12N50EXX
|
VISHAY |
|
TO-263 | 384700 | 2022+ | INSTOCK | 24-08-15 | Nego IC Co. |
Цитата
|
| SIHB12N60E | VISHAY |
|
TO-263 | 63000 | 20+PB | Pb-Free | 24-08-15 | FEDERAL INDUSTRY CO. |
Цитата
|
|
SIHB12N60E
|
VISHAY |
|
TO-263 | 10000 | 2022+ | 24-08-15 | Nego IC Co. |
Цитата
|
|
|
SIHB12N60E-GE3
|
VISHAY |
|
D2PAK | 357 | 20+PB | Pb-Free | 24-08-15 | IC Agent Electronics Ins |
Цитата
|
| SIHB12N60E-GE3 | VishaySili |
|
MOSFETN-CH600V12ATO263 | 59850 | 2020 | 24-08-15 | Hong Da Electronics Co.LTD |
Цитата
|
|
|
SIHB12N60E-GE3
|
VISHAY |
|
TO-263 | 10000 | 2022+ | 24-08-15 | Nego IC Co. |
Цитата
|
|
|
SIHB12N60EGE3
|
VISHAY |
|
384950 | 2022+ | INSTOCK | 24-08-15 | Nego IC Co. |
Цитата
|
|
| SIHB12N60ET1-GE3 | VISHAY |
|
TO-263D2Pak | 357 | 20+PB | Pb-Free | 24-08-15 | IC Agent Electronics Ins |
Цитата
|
| SIHB12N60ET1-GE3 | VishaySili |
|
MOSFETN-CH600V12ATO263 | 59850 | 2020 | 24-08-15 | Hong Da Electronics Co.LTD |
Цитата
|
|
|
SIHB12N60ET1-GE3
|
VISHAY |
|
10000 | 2022+ | 24-08-15 | Nego IC Co. |
Цитата
|
||
| SIHB12N60ET5-GE3 | VishaySili |
|
MOSFETN-CH600V12ATO263 | 59850 | 2020 | 24-08-15 | Hong Da Electronics Co.LTD |
Цитата
|
|
|
SIHB12N60ET5-GE3
|
VISHAY |
|
TO-263 | 10000 | 2022+ | INSTOCK | 24-08-15 | Nego IC Co. |
Цитата
|
|
SIHB12N60EXX
|
VISHAY |
|
TO-263 | 384702 | 2022+ | INSTOCK | 24-08-15 | Nego IC Co. |
Цитата
|
| SIHB12N65E | VISHAY |
|
TO-263 | 10000 | 13+ | 24-08-15 | Nego IC Co. |
Цитата
|
|
| SIHB12N65E-GE3 | VISHAY |
|
D2PAKTO-263 | 357 | 20+PB | Pb-Free | 24-08-15 | IC Agent Electronics Ins |
Цитата
|
| SIHB12N65E-GE3 | VishaySili |
|
MOSFETN-CH650V12AD2PAK | 59850 | 2020 | 24-08-15 | Hong Da Electronics Co.LTD |
Цитата
|
|
|
SIHB12N65E-GE3
|
VISHAY |
|
D2PAK(TO-263) | 10000 | 2022+ | INSTOCK | 24-08-15 | Nego IC Co. |
Цитата
|
|
SIHB12N65EXX
|
VISHAY |
|
TO-263 | 384704 | 2022+ | INSTOCK | 24-08-15 | Nego IC Co. |
Цитата
|
1