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SISS5710DNT1GE3 Результаты поискаB
Премиум B
Hong Da Electronics Co.LTD
USA
brenda@hongda-ic.com
| Номер части | MFG | Техническая спецификация | Описание | Q'ty | Датакод | Расположение | Рег Дата | RFQ |
| SISS02DN-T1-GE3 | VishaySili |
|
MOSFETN-CHAN25VPOWERPAK1212- | 59850 | 2020 | 24-08-15 |
Цитата
|
|
| SISS04DN-T1-GE3 | VishaySili |
|
MOSFETN-CHAN30VPOWERPAK1212- | 59850 | 2020 | 24-08-15 |
Цитата
|
|
| SISS10DN-T1-GE3 | VishaySili |
|
MOSFETN-CH40V60APPAK1212-8S | 59850 | 2020 | 24-08-15 |
Цитата
|
|
| SISS12DN-T1-GE3 | VishaySili |
|
MOSFETN-CHAN40VPOWERPAK1212- | 59850 | 2020 | 24-08-15 |
Цитата
|
|
| SISS23DN-T1-GE3 | VishaySili |
|
MOSFETP-CH20V50APPAK1212-8S | 59850 | 2020 | 24-08-15 |
Цитата
|
|
| SISS26DN-T1-GE3 | VishaySili |
|
MOSFETN-CHANNEL60V60A1212-8S | 12000 | 2020 | 24-08-15 |
Цитата
|
|
| SISS27DN-T1-GE3 | VishaySili |
|
MOSFETP-CH30V50APPAK1212-8S | 15000 | 2020 | 24-08-15 |
Цитата
|
|
| SISS28DN-T1-GE3 | VishaySili |
|
MOSFETN-CH25V60APOWERPAK1212 | 59850 | 2020 | 24-08-15 |
Цитата
|
|
| SISS40DN-T1-GE3 | VishaySili |
|
MOSFETN-CH100V36.5APPAK1212 | 59850 | 2020 | 24-08-15 |
Цитата
|
|
| SISS42DN-T1-GE3 | VishaySili |
|
MOSFETN-CHAN100VPOWERPAK1212 | 59850 | 2020 | 24-08-15 |
Цитата
|
|
| SISS64DN-T1-GE3 | VishaySili |
|
MOSFETN-CHANNEL30V40A1212-8S | 59850 | 2020 | 24-08-15 |
Цитата
|
|
| SISS65DN-T1-GE3 | VishaySili |
|
MOSFETP-CHAN30VPPAK1212-8S | 59850 | 2020 | 24-08-15 |
Цитата
|
|
| SISS67DN-T1-GE3 | VishaySili |
|
MOSFETP-CHAN30VPOWERPAK1212- | 59850 | 2020 | 24-08-15 |
Цитата
|
|
| SISS70DN-T1-GE3 | VishaySili |
|
MOSFETN-CH125V | 59850 | 2020 | 24-08-15 |
Цитата
|
|
| SISS71DN-T1-GE3 | VishaySili |
|
MOSFETP-CH100V23A1212-8 | 59850 | 2020 | 24-08-15 |
Цитата
|
|
| SISS72DN-T1-GE3 | VishaySili |
|
MOSFETN-CH150V | 59850 | 2020 | 24-08-15 |
Цитата
|
|
| SISS98DN-T1-GE3 | VishaySili |
|
MOSFETN-CH200V14.1A1212-8 | 59850 | 2020 | 24-08-15 |
Цитата
|
|
| SISS27ADN-T1-GE3 | VishaySili |
|
MOSFETP-CH30V50APOWERPAK1212 | 59850 | 2020 | 24-08-15 |
Цитата
|
1