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SI4810BDY Результаты поискаB
Премиум B
Hong Da Electronics Co.LTD
USA
brenda@hongda-ic.com
| Номер части | MFG | Техническая спецификация | Описание | Q'ty | Датакод | Расположение | Рег Дата | RFQ |
| SI4816DY-T1-E3 | VishaySili |
|
MOSFET2N-CH30V5.3A8-SOIC | 59850 | 2020 | 24-08-14 |
Цитата
|
|
| SI4818DY-T1-E3 | VishaySili |
|
MOSFET2N-CH30V5.3A8-SOIC | 59850 | 2020 | 24-08-14 |
Цитата
|
|
| SI4812BDY-T1-E3 | VishaySili |
|
MOSFETN-CH30V7.3A8-SOIC | 59850 | 2020 | 24-08-14 |
Цитата
|
|
| SI4814BDY-T1-E3 | VishaySili |
|
MOSFET2N-CH30V10A8SOIC | 59850 | 2020 | 24-08-14 |
Цитата
|
|
| SI4816BDY-T1-E3 | VishaySili |
|
MOSFET2N-CH30V5.8A8-SOIC | 59850 | 2020 | 24-08-14 |
Цитата
|
|
| SI4816DY-T1-GE3 | VishaySili |
|
MOSFET2N-CH30V5.3A8-SOIC | 59850 | 2020 | 24-08-14 |
Цитата
|
|
| SI4818DY-T1-GE3 | VishaySili |
|
MOSFET2N-CH30V5.3A8-SOIC | 59850 | 2020 | 24-08-14 |
Цитата
|
|
| SI4812BDY-T1-GE3 | VishaySili |
|
MOSFETN-CH30V7.3A8-SOIC | 59850 | 2020 | 24-08-14 |
Цитата
|
|
| SI4814BDY-T1-GE3 | VishaySili |
|
MOSFET2N-CH30V10A8SOIC | 59850 | 2020 | 24-08-14 |
Цитата
|
|
| SI4816BDY-T1-GE3 | VishaySili |
|
MOSFET2N-CH30V5.8A8-SOIC | 59850 | 2020 | 24-08-14 |
Цитата
|
1