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SI2320DST1E3 Результаты поискаB
Премиум B
Hong Da Electronics Co.LTD
USA
brenda@hongda-ic.com
| Номер части | MFG | Техническая спецификация | Описание | Q'ty | Датакод | Расположение | Рег Дата | RFQ |
| SI2321-TP | MicroComme |
|
P-CHANNELMOSFETSOT-23PACKAGE | 59850 | 2020 | 24-08-14 |
Цитата
|
|
| SI2323DS-T1 | VishaySili |
|
MOSFETP-CH20V3.7ASOT23 | 59850 | 2020 | 24-08-14 |
Цитата
|
|
| SI2321DS-T1-E3 | VishaySili |
|
MOSFETP-CH20V2.9ASOT-23 | 59850 | 2020 | 24-08-14 |
Цитата
|
|
| SI2323DS-T1-E3 | VishaySili |
|
MOSFETP-CH20V3.7ASOT23-3 | 59850 | 2020 | 24-08-14 |
Цитата
|
|
| SI2325DS-T1-E3 | VishaySili |
|
MOSFETP-CH150V0.53ASOT23-3 | 51000 | 2020 | 24-08-14 |
Цитата
|
|
| SI2327DS-T1-E3 | VishaySili |
|
MOSFETP-CH200V0.38ASOT23-3 | 59850 | 2020 | 24-08-14 |
Цитата
|
|
| SI2328DS-T1-E3 | VishaySili |
|
MOSFETN-CH100V1.15ASOT23-3 | 36000 | 2020 | 24-08-14 |
Цитата
|
|
| SI2321DS-T1-GE3 | VishaySili |
|
MOSFETP-CH20V2.9ASOT-23 | 59850 | 2020 | 24-08-14 |
Цитата
|
|
| SI2323DS-T1-GE3 | VishaySili |
|
MOSFETP-CH20V3.7ASOT23-3 | 59850 | 2020 | 24-08-14 |
Цитата
|
|
| SI2324DS-T1-GE3 | VishaySili |
|
MOSFETN-CH100V2.3ASOT-23 | 59850 | 2020 | 24-08-14 |
Цитата
|
|
| SI2325DS-T1-GE3 | VishaySili |
|
MOSFETP-CH150V0.53ASOT-23 | 59850 | 2020 | 24-08-14 |
Цитата
|
|
| SI2327DS-T1-GE3 | VishaySili |
|
MOSFETP-CH200V0.38ASOT-23 | 59850 | 2020 | 24-08-14 |
Цитата
|
|
| SI2328DS-T1-GE3 | VishaySili |
|
MOSFETN-CH100V1.15ASOT-23 | 59850 | 2020 | 24-08-14 |
Цитата
|
|
| SI2329DS-T1-GE3 | VishaySili |
|
MOSFETP-CH8V6ASOT-23 | 18000 | 2020 | 24-08-14 |
Цитата
|
|
| SI2323CDS-T1-GE3 | VishaySili |
|
MOSFETP-CH20V6ASOT-23 | 59850 | 2020 | 24-08-14 |
Цитата
|
|
| SI2323DDS-T1-GE3 | VishaySili |
|
MOSFETP-CH20V5.3ASOT-23 | 59850 | 2020 | 24-08-14 |
Цитата
|
1